SiC Device Design Engineer

Role

• Lead the design and optimization of next-generation SiC MOSFETs and GaN power devices for automotive and industrial applications.
• Benchmarking of critical design parameters in and across the voltage nodes.
• Research and evaluate novel architectures to improve performance and reliability.
• Define device architectures to achieve electrical, thermal, reliability, and cost targets.
• Support development and calibration of TCAD process and device simulation models using experimental characterization data.
• Design reliable edge termination structures for high and ultra-high voltage applications.
• Lead prototype evaluation, electrical characterization, and silicon debug activities in collaboration with Failure Analysis and Reliability teams.
• Optimize device designs considering process variation, manufacturability, and long-term reliability.
• Collaborate with Process Integration, Product Engineering, Reliability, and external foundry teams throughout product development.
• Support in IP generations, technical report writing, and research publications.
• Provide technical guidance to junior engineers and review technical deliverables.
• Clear communication of complex technological ideas to cross functional and leadership teams.

Requirements

• MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or a related discipline.
• 6–10 years of experience in power semiconductor device design.